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Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

Home / Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

E.G. Marin, D. Marian, M. Perucchini, G. Fiori, and G. Iannaccone

DOI: 10.1021/acsnano.9b08489 ACS Nano 14, 2, 1982–1989 (2020)

Resource type:

• Quantum ESPRESSO