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The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

Home / The origin and nature of killer defects in 3C-SiC for power electronic applications by a multiscale atomistic approach

E. Scalise, L. Barbisan, A. Sarikov, F. Montalenti,L. Miglio, and A. Marzegalli

DOI: 10.1039/D0TC00909A J. Mater. Chem. C 25 (2020)

Resource type:

• Quantum ESPRESSO

https://arxiv.org/pdf/2001.11826.pdf