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    About MAX

    MAX (MAterials design at the eXascale) is a European Centre of Excellence which enables materials modelling, simulations, discovery and design at the frontiers of the current and future High Performance Computing (HPC), High Throughput Computing (HTC) and data analytics technologies.

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    The software developed by MAX is made available to the whole community in open-source form. In this section you can find our main software output and how to obtain it.
     

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    EXASCALE

    MAX addresses the challenges of porting, scaling, and optimising material science application codes for the peta- and exascale platforms in order to deliver best code performance and improve users productivity on the upcoming architectures.

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    DATA

    MAX is committed in supporting data stewardship by adhering to the FAIR-sharing principles. High-quality data is provided both in the format of curated scientific results and raw data, focusing on the tracking of provenance to ensure the full reproducibility of results.

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    MAX develops and offers services and technical support dedicated to the general public and the expert users from both industry and academia.

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    TRAINING

    MAX offers integrated training and education in the field of HPC developments and in the computational materials science domain, including workshops and schools, contributions to University courses and training through research in the CoE labs.

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    • Training materials
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  • About MaX
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    • MaX 2018-2021
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  • Data
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    • MaX Container technology for HPC system
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Science & MaX

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Quantum ESPRESSO
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CP2K
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AiiDA

Interference effects in one-dimensional moiré crystals

N. Wittemeier, M. J. Verstraete, P. Ordejón, and Z. Zanolli

Carbon 186, 416-422 DOI: https://doi.org/10.1016/j.carbon.2021.10.028
  • Siesta

Tuning Spin Current Injection at Ferromagnet-Nonmagnet Interfaces by Molecular Design

A. Wittmann, G. Schweicher, K. Broch, J. Novak, V. Lami, D. Cornil, E. R. McNellis, O. Zadvorna, D. Venkateshvaran, K. Takimiya, Y. H. Geerts, J. Cornil,  Y. Vaynzof, J. Sinova, S. Watanabe, and H. Sirringhaus

Phys. Rev. Lett. 124, 027204 (2020) DOI: 10.1103/PhysRevLett.124.027204
  • Siesta

Two-Dimensional Antimony Oxide

S. Wolff, R. Gillen, M. Assebban, G. Abellan, and J. Maultzsch

Phys. Rev. Lett. 124, 126101 (2020) DOI: 10.1103/PhysRevLett.124.126101
  • Siesta

Uncovering the Triplet Ground State of Triangular Graphene Nanoflakes Engineered with Atomic Precision on a Metal Surface

J. C. Li, S. Sanz, J. Castro-Esteban, M. Vilas-Varela, N. Friedrich, T. Frederiksen, D. Pena, and J. I. Pascual

Phys. Rev. Lett. 124, 177201 (2020) DOI: 10.1103/PhysRevLett.124.177201
  • Siesta

Emergence of Topologically Nontrivial Spin-Polarized States in a Segmented Linear Chain

T. Pham, S.  Oh, S. Stonemeyer, B. Shevitski, J. D. Cain, C. Y. Song, P. Ercius, M. L. Cohen, and A. Zettl

Phys. Rev. Lett. 124, 206403 (2020) DOI: 10.1103/PhysRevLett.124.206403
  • Siesta

Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals

G. H. Yang, Y. Shao, J. B. Niu, X. L. Ma, C. Y. Lu, W. Wei, X. C. Chuai, J. W. Wang, J. C. Cao, H. Huang, G. W. Xu, X. W. Shi, Z. Y. Ji, N. D. Lu, D. Geng, J. Qi,  Y. Cao, Z. L. Liu, L. W. Liu, Y. Huang, L. Liao, W. Q. Dang, Z. W. Zhang, and Y. Liu

Nat Commun 11, 659 (2020) DOI: 10.1038/s41467-020-14383-0
  • Siesta

Vibron-assisted spin excitation in a magnetically anisotropic molecule

N. Bachellier, B. Verlhac, L. Garnier, J. Zaldivar, C. Rubio-Verdu,P. Abufager, M. Ormaza, D. J. Choi, M. L. Bocquet, J. I. Pascual, N. Lorente, and L. Limot

Nat Commun 11, 1619 (2020) DOI: 10.1038/s41467-020-15266-0
  • Siesta

Machine learning accurate exchange and correlation functionals of the electronic density

S. Dick and M. Fernandez-Serra

Nat Commun 11, 3509 (2020) DOI: 10.1038/s41467-020-17265-7
  • Siesta

Rectifying behavior in twisted bilayer black phosphorus nanojunctions mediated through intrinsic anisotropy

V. Shukla, A. Grigoriev, and R. Ahuja

Nanoscale Advances 4 (2020) DOI: 10.1039/C9NA00320G
  • Siesta

Edge induced band bending in van der Waals heterojunctions: A first principle study

Y. Ou, Z. Kang,Q. L. Liao, Z. Zhang, and Y. Zhang

Nano Res. 13, 701–708 (2020) DOI: 10.1007/s12274-020-2679-y
  • Siesta

Chevron-type graphene nanoribbons with a reduced energy band gap: Solution synthesis, scanning tunneling microscopy and electrical characterization

X. M. Liu, G. Li, A. Lipatov, T. Sun, M. M. Pour, N. R. Aluru, J. W. Lyding, and A. Sinitskii

Nano Res. 13, 1713–1722 (2020) DOI: 10.1007/s12274-020-2797-6
  • Siesta

Embedding Methods for Quantum Chemistry: Applications from Materials to Life Sciences

L. O. Jones, M. A. Mosquera, G. C. Schatz, and M. A. Ratner

J. Am. Chem. Soc. 142, 7, 3281–3295 (2020) DOI: 10.1021/jacs.9b10780
  • Siesta

Cation Engineering in Two-Dimensional Ruddlesden-Popper Lead Iodide Perovskites with Mixed Large A-Site Cations in the Cages

Y. P. Fu, X. Y. Jiang, X. T. Li, B. Traore, I. Spanopoulos, C. Katan, J. Even, M. G. Kanatzidis, and E. Harel

J. Am. Chem. Soc. 142, 8, 4008–4021 (2020) DOI: 10.1021/jacs.9b13587
  • Siesta

Three-Dimensional Lead Iodide Perovskitoid Hybrids with High X-ray Photoresponse

X. T. Li, Y. H. He, M. Kepenekian, P. J. Guo, W. J. Ke, J. Even, C. Katan, C. C. Stoumpos, R. D. Schaller, and M. G. Kanatzidis

J. Am. Chem. Soc. 142, 14, 6625–6637 (2020) DOI: 10.1021/jacs.0c00101
  • Siesta

Single-Molecule Conductance through an Isoelectronic B-N Substituted Phenanthrene Junction

Z. H. Zhao, L. Wang, S. Li, W. D. Zhang, G. He, D. Wang, S. M. Hou, and L. J. Wan

J. Am. Chem. Soc. 142, 18, 8068–8073 (2020) DOI: 10.1021/jacs.0c00879
  • Siesta

Proton removal-induced positive and negative magnetoresistance in cobalt heme analogs

J. Zeng and K. Q. Chen

J. Mater. Chem. C 11 (2020) DOI: 10.1039/C9TC06897J
  • Siesta

Black arsenene as a promising anisotropic sensor with high sensitivity and selectivity: insights from a first-principles investigation

J. J. Mao and Y. Chen

J. Mater. Chem. C 12 (2020) DOI: 10.1039/C9TC06928C
  • Siesta

Spin-dependent Seebeck effect, and spin-filtering and diode effects in magnetic boron-nitrogen nanotube heterojunctions

D. D. Wu, G. F. Du, and H. H. Fu

J. Mater. Chem. C 13 (2020) DOI: 10.1039/C9TC06652G
  • Siesta

Modulation of nearly free electron states in hydroxyl-functionalized MXenes: a first-principles study

J. Q. Zhou, M. Khazaei, A. Ranjbar, V. Wang, T. D. Kuehne, K. Ohno, Y. Kawazoe, and Y. Y. Liang

J. Mater. Chem. C 15 (2020) DOI: 10.1039/C9TC06837F
  • Siesta

Electrical properties and spintronic application of carbon phosphide nanoribbons with edge functionalization

L. M. Cao, X. B. Li, Y. Li, and G. H. Zhou

J. Mater. Chem. C 27 (2020) DOI: 10.1039/D0TC01764G
  • Siesta

Asymmetrically flexoelectric gating effect of Janus transition-metal dichalcogenides and their sensor applications

K. P. Dou, H. H. Ku, X. H. Wang, X. Y. Wang, H. Jin, G. P. Zhang, X. Q. Shi, and L. Z. Kou

J. of Materials Chemistry C 33 (2020) DOI: 10.1039/D0TC02610G
  • Siesta

Graphene hetero-multilayer on layered platinum mineral jacutingaite (Pt2HgSe3): van der Waals heterostructures with novel optoelectronic and thermoelectric performances

A. Bafekry, M.M. Obeid, C. V. Nguyen, M. Ghergherehchi, and M. B. Tagani

J. of Materials Chemistry A 26 (2020) DOI: 10.1039/D0TA02847A
  • Siesta

Engineering the hydrogen evolution reaction of transition metals: effect of Li ions

A: Guha, N. M. Kaley, J. Mondal, and T. N. Narayanan

J. of Materials Chemistry A 31 (2020) DOI: 10.1039/C9TA12926J
  • Siesta

Water-induced formation of an alkali-ion dimer in cryptomelane nanorods

S. B. Cheng, V. Sharma, A. S. Poyraz, L. J.  Wu, X.  Li, A. Marschilok, E. S. Takeuchi, K. J. Takeuchi, M. V. Fernandez-Serra, and Y. M. MV

Chemical Science 19 (2020) DOI: 10.1039/D0SC01517B
  • Siesta

Tuning the thermoelectrical properties of anthracene-based self-assembled monolayers

A. Ismael, X. T. Wang, T. L. R. Bennett, L. A. Wilkinson, B. J. Robinson, N. J. Long, L. F. Cohen, and C. J. Lambert

Chemical Science 26 (2020) DOI: 10.1039/D0SC02193H
  • Siesta

A first-principles study of the effects of atom impurities, defects, strain, electric field and layer thickness on the electronic and magnetic properties of the C2N nanosheet

A. Bafekry, C. Stampfl, M. Ghergherehchi, and S. F. Shayesteh

Carbon 157, 371-384 (2020) DOI: 10.1016/j.carbon.2019.10.038
  • Siesta

The role of water on the electronic transport in graphene nanogap devices designed for DNA sequencing

E. D. Martins, R. G. Amorim, G. T. Feliciano, R. H. Scheicher, and A. R. Rocha

Carbon 158, 314-319 (2020) DOI: 10.1016/j.carbon.2019.10.067
  • Siesta

Catalytic formation of narrow Nb nanowires inside carbon nanotubes

D. Liu and D. Tomanek

Carbon 159, 95-200 (2020) DOI: 0.1016/j.carbon.2019.12.009
  • Siesta

Hydrogen-dominated metal-free growth of graphitic-nitrogen doped graphene with n-type transport behaviors

J. Yang, W. Z. He, Q. Q. Jiang, Z. H. Chen, H.x. Ju, X. D. Xue, Z. P.  Xu, P.A. Hu, and G. Yu

Carbon 161,123-131 (2020) DOI: 10.1016/j.carbon.2020.01.051
  • Siesta

Electronic and magnetic properties of pentagonal nanoribbons

J. D. Correa, M. Pacheco, S. Bravo, and L. Chico

Carbon 162, 209-219 (2020) DOI: 10.1016/j.carbon.2020.02.037
  • Siesta

Role of knock-on in electron beam induced etching of diamond

M. Fronzi, J. Bishop, A. A. Martin, M. H. N. Assadi, B. Regan, C. Stampfl, I.  Aharonovich, M. J. Ford, and M. Toth

Carbon 164, 51-58 (2020) DOI: 10.1016/j.carbon.2020.03.039
  • Siesta

Electronic and structural properties of tetragraphenes

F. M. de Vasconcelos, A. G. Souza, V. Meunier, and E. C. Girao

Carbon 167, 403-413 (2020) DOI: 10.1016/j.carbon.2020.05.030
  • Siesta

Oxygen intercalated graphene on SiC(0001): Multiphase SiOx layer formation and its influence on graphene electronic properties

I. Antoniazzi, T. Chagas, M. J. S. Matos, L. A. B. Marcal, E. A. Soares, M. S. C. Mazzoni, R. H. Miwa, J. M. J. Lopes, A. Malachias, R. Magalhaes-Paniago, and  M. H. Oliveira

Carbon 167, 746-759 (2020) DOI: 10.1016/j.carbon.2020.05.064
  • Siesta

Atomistic Modeling of van der Waals Heterostructures with Group-6 and Group-7 Monolayer Transition Metal Dichalcogenides for Near Infrared/Short-wave Infrared Photodetection

D. Saha, A. Varghese, and S. Lodha

ACS Appl. Nano Mater. 3, 1, 820–829 (2020) DOI: 10.1021/acsanm.9b02342
  • Siesta

DNA Sequencing with Single-Stranded DNA Rectification in a Nanogap Gated by N-Terminated Carbon Nanotube Electrodes

I. Djurisic, M. S. Drazic, A. Z. Tomovic, M. Spasenovic, Z. Sljivancanin, V. P. Jovanovic, and R. Zikic

ACS Appl. Nano Mater. 3, 3, 3034–3043 (2020) DOI: 10.1021/acsanm.0c00385
  • Siesta

First-Principles Investigation of the 1T-HfTe2 Nanosheet for Selective Gas Sensing

D. Chakraborty and P. Johari

ACS Appl. Nano Mater. 3, 6, 5160–5171 (2020) DOI: 10.1021/acsanm.0c00500
  • Siesta

Interface Engineering in Hybrid Iodide CH3NH3PbI3 Perovskites Using Lewis Base and Graphene toward High-Performance Solar Cells

C. J. Yu, Y. H. Kye, U. G. Jong, K. C. Ri, S. H. Choe, J. S. Kim, S. G. Ko, G. I. Ryu, and B. Kim

ACS Appl. Mater. Interfaces 12, 1, 1858–1866 (2020) DOI: 10.1021/acsami.9b17552
  • Siesta

One-Dimensional Fullerene/Porphyrin Cocrystals: Near-Infrared Light Sensing through Component Interactions

T. Wakahara, K. Nagaoka, A. Nakagawa, C. Hirata, Y. Matsushita, K. Miyazawa, O. Ito, Y. Wada, M. Takagi, T. Ishimoto, M. Tachikawa, and K. Tsukagoshi

ACS Appl. Mater. Interfaces 12, 2, 2878–2883 (2020) DOI: 10.1021/acsami.9b18784
  • Siesta

Control of Charge Carriers and Band Structure in 2D Monolayer Molybdenum Disulfide via Covalent Functionalization

L.O. Jones, M. A. Mosquera, M. A. Ratner, and G. C. Schatz

ACS Appl. Mater. Interfaces 12, 4, 4607–4615 (2020) DOI: 10.1021/acsami.9b19639
  • Siesta

Importance of Vacancies and Doping in the Hole-Transporting Nickel Oxide Interface with Halide Perovskites

B. Traore, L. Pedesseau, J.C. Blancon, S. Tretiak, A.D. Mohite, J. Even, C. Katan, and M. Kepenekian

ACS Appl. Mater. Interfaces 12, 5, 6633–6640 (2020) DOI: 10.1021/acsami.9b19457
  • Siesta

Tuning Single-Molecule Conductance in Metalloporphyrin-Based Wires via Supramolecular Interactions

A.C. Aragones, A. Martin-Rodriguez, D. Aravena, J. Puigmarti-Luis, D.B. Amabilino, N. Aliaga-Alcalde, A. Gonzalez-Campo, E. Ruiz, and I. Diez-Perez

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION 59, 43 (2020) DOI: 10.1002/anie.202007237
  • Siesta

Multi-Space Excitation as an Alternative to the Landauer Picture for Nonequilibrium Quantum Transport

J. Lee, H.S. Kim, and Y.H. Kim

ADVANCED SCIENCE 7, 16 (2020) DOI: 10.1002/advs.202001038
  • Siesta

Giant spin signals in chemically functionalized multiwall carbon nanotubes

R. Bonnet, P.  Martin, S. Suffit, P. Lafarge, A. Lherbier, J.C. Charlier, M.L. Della Rocca, and C. Barraud

SCIENCE ADVANCES 6, 31 (2020) DOI: 10.1126/sciadv.aba5494
  • Siesta

Detecting Chirality in Two-Terminal Electronic Nanodevices

X. Yang, C.H. van der Wal, and B.J. van Wees

NANO LETTERS 20, 8, 6148–6154 (2020) DOI: 10.1021/acs.nanolett.0c02417
  • Siesta

Tuning Electrical Conductance in Bilayer MoS2 through Defect-Mediated Interlayer Chemical Bonding

L.L. Zhang, G. Wang, Y.B. Zhang, Z.P. Cao, Y. Wang, T.J. Cao, C. Wang, B. Cheng, W.Q. Zhang, X.G. Wan, J.H. Lin, S.J. Liang, and F. Miao

ACS Nano 14, 8, 10265–10275 (2020) DOI: 10.1021/acsnano.0c03665
  • Siesta

Symmetry Dictated Grain Boundary State in a Two-Dimensional Topological Insulator

H.W. Kim, S.H. Kang, H.J. Kim, K. Chae, S. Cho, W. Ko, S. Jeon, S.H. Kang, H. Yang, S.W. Kim, S. Park, S. Hwang, Y.K. Kwon,and Y.W. Son

NANO LETTERS 20, 8, 5837–5843 (2020) DOI: 10.1021/acs.nanolett.0c01756
  • Siesta

Two-Dimensional Molecular Charge Density Waves in Single-Layer-Thick Islands of a Dirac Fermion System

K.Z. Latt, J.A. Schlueter, P. Darancet, and S.W. Hla

CS Nano 14, 7, 8887–8893 (2020) DOI: 10.1021/acsnano.0c03694
  • Siesta

Constructing Dual-Molecule Junctions to Probe Intermolecular Crosstalk

X.H. Wu, F. Chen, F. Yan, L.Q. Pei, R. Hou, J.R. Horsley, A.D. Abell, X.S. Zhou, J.X. Yu, D.F. Li, S. Jin, and B.W. Mao

ACS APPLIED MATERIALS & INTERFACES 12, 27, 30584–30590 (2020) DOI: 10.1021/acsami.0c01556
  • Siesta

Plasma-Treated Ultrathin Ternary FePSe3 Nanosheets as a Bifunctional Electrocatalyst for Efficient Zinc-Air Batteries

Y.A. Hao, A.J. Huang, S.L. Han, H.J. Huang, J.N. Song, X.L. Sun, Z.G. Wang, L.L. Li, F. Hu, J.J. Xue, and S.J. Peng

ACS APPLIED MATERIALS & INTERFACES 12, 26, 29393–29403 (2020) DOI: 10.1021/acsami.0c08133
  • Siesta

Ultrastable Sodium-Sulfur Batteries without Polysulfides Formation Using Slit Ultramicropore Carbon Carrier

Q.B. Guo, S. Li, X.J. Liu, H.C. Lu, X.Q. Chang, H.S. Zhang, X.H. Zhu, Q.Y. Xia, C.L. Yan, and H. Xia

ADVANCED SCIENCE 7, 11 (2020) DOI: 10.1002/advs.201903246
  • Siesta

Cross-plane transport in a single-molecule two-dimensional van der Waals heterojunction

S.Q. Zhao, Q.Q. Wu, J.C. Pi, J.Y. Liu,J.T. Zheng, S.J. Hou, J.Y. Wei, R.H. Li, H. Sadeghi, Y. Yang, J. Shi, Z.B. Chen, Z.Y.  Xiao, C. Lambert, and W.J. Hong

SCIENCE ADVANCES 6, 22 (2020) DOI: 10.1126/sciadv.aba6714
  • Siesta

On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides

W. Mortelmans, A.N. Mehta, Y. Balaji, S. Sergeant, R. Meng, M. Houssa, S. De Gendt, M. Heyns, and C. Merckling

ACS APPLIED MATERIALS & INTERFACES 12, 24, 27508–27517 (2020) DOI: 10.1021/acsami.0c05872
  • Siesta

Sculpting Artificial Edges in Monolayer MoS2 for Controlled Formation of Surface-Enhanced Raman Hotspots

R. Rani, A. Yoshimura, S. Das, M.R. Sahoo, A. Kundu, K.K. Sahu, V. Meunier, S.K. Nayak, N. Koratkar, and K.S. Hazra

ACS Nano 14, 5, 6258–6268 (2020) DOI: 10.1021/acsnano.0c02418
  • Siesta

Anisotropic Transport Property of Antimonene MOSFETs

Y.H. Yin, C. Shao, C. Zhang, Z.F. Zhang, X.W. Zhang, J. Robertson, and Y.Z. Guo

ACS APPLIED MATERIALS & INTERFACES 12, 19, 22378–22386 (2020) DOI: 10.1021/acsami.0c04662
  • Siesta

Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

X.T. Sun, L. Xu, Y. Zhang, W.Z. Wang, S.Q. Liu, C. Yang, Z.Y. Zhang, and J. Lu

ACS APPLIED MATERIALS & INTERFACES 12, 18, 20633–20644 (2020) DOI: 10.1021/acsami.0c01750
  • Siesta

Electronic Transport through DNA Nucleotides in BC3 Nanogap for Rapid DNA Sequencing

R.L. Kumawat, P. Garg, G. Bhattacharyya, and B. Pathak

ACS APPLIED ELECTRONIC MATERIALS 2, 5, 1218–1225 (2020) DOI: 10.1021/acsaelm.0c00024
  • Siesta

Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

M. El Abbassi, M.L. Perrin, G.B. Barin, S. Sangtarash, J. Overbeck, O. Braun, C.J. Lambert, Q. Sun, T. Prechtl, A. Narita, K. Mullen, P. Ruffieux, H. Sadeghi, R. Fasel, and M. Calame

ACS Nano 14, 5, 5754–5762 (2020) DOI: 10.1021/acsnano.0c00604
  • Siesta

Probing the Magnetism of Topological End States in 5-Armchair Graphene Nanoribbons

J. Lawrence, P. Brandimarte, A. Berdonces-Layunta, M.S.G. Mohammed, A. Grewal, C.C. Leon, D. Sanchez-Portal, and D.G. de Oteyza

ACS Nano 14, 4, 4499–4508 (2020) DOI: 10.1021/acsnano.9b10191
  • Siesta

Metal-Organic Frameworks for the Adsorptive Removal of Gaseous Aliphatic Ketones

K. Vikrant, K.H. Kim, S. Kumar, and D.W. Boukhvalov

ACS APPLIED MATERIALS & INTERFACES 12, 9, 10317–10331 (2020) DOI: 10.1021/acsami.9b20375
  • Siesta

Polarization Screening Mechanisms at La0.7Sr0.3MnO3-PbTiO3 Interfaces

J.J.P. Peters, N.C. Bristowe, D. Rusu, G. Apachitei, R. Beanland, M. Alexe, and A.M. Sanchez

ACS APPLIED MATERIALS & INTERFACES 12, 9, 10657–10663 (2020) DOI: 10.1021/acsami.9b21619
  • Siesta

High on/off Current Ratio in Dual in-Plane Gate Spin Transistor Based on the V-B Defect Hexagonal BN

H.L. Yu, X.F. Jiang, Y.J. Dong, Z.G. Shao, X.F. Yang, Y.M. Tao, and Y.S. Liu

ACS APPLIED ELECTRONIC MATERIALS 2, 2, 545–555 (2020) DOI: 10.1021/acsaelm.9b00795
  • Siesta

Band Depopulation of Graphene Nanoribbons Induced by Chemical Gating with Amino Groups

J.C. Li, P. Brandimarte, M. Vilas-Varela, N. Merino-Diez, C. Moreno, A. Mugarza, J.S. Mollejo, D. Sanchez-Portal, D.G. de Oteyza, M. Corso, A. Garcia-Lekue, D. Pena, and J.I. Pascual

ACS Nano 14, 2, 1895–1901 (2020) DOI: 10.1021/acsnano.9b08162
  • Siesta
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MaX - Materials design at the Exascale has received funding from the European High Performance Computing Joint Undertaking and Participating Countries in Project (Czechia, France, Germany, Italy, Slovenia and Spain) under grant agreement no. 101093374.

Views and opinions expressed are however those of the author(s) only and do not necessarily reflect those of the European High Performance Computing Joint Undertaking. Neither the European Union nor the granting authority can be held responsible for them.

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